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| Contents Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design Page 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE(sat) B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types E-Series, Improved NPT technology 600 ...1200 V 600 V 600 V 1200 ... 1700 V IC 7 ... 20 A 7 ... 20 A 10 ... 20 A 20 ... 150 A 6 6 6 7 MOSFET Chips VDSS HiPerFET Power MOSFET PolarHTTM MOSFET, very Low RDS(on) P-Channel Power MOSFET N-Channel Depletion Mode MOSFET Layouts TM RDS(on) 0.005 ... 4.5 0.015 ... 0.135 0.06 ... 1.2 30 ... 110 8-10 11 12 12 13-17 70 ...1200 V 55 ... 300 V -100 ...-600 V 500 ...1000 V Bipolar Chips VRRM / VDRM Rectifier Diodes FREDs Low Leakage FREDs SONIC-FRDTM Diodes GaAs Schottky Diodes Schottky Diodes Phase Control Thyristors Fast Rectifier Diodes 1200 ... 1800 V 600 ... 1200 V 200 ... 1200 V 600 ... 1800 V 100 ... 600 V 8 ... 200 V 800 ... 2200 V 1600 ... 1800 V IF(AV)M / IT(AV)M 12 ... 416 A 8 ... 244 A 9 ... 148 A 12 ... 150 A 3.5 ... 25 A 28 ... 145 A 15 ... 540 A 10 ... 26 A 18-19 20-21 22-23 24-25 26-27 28-31 32-33 34 Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates What is DCB/DAB? DCB Specification 35 36 IXYS reserves the right to change limits, test conditions and dimensions 1 Symbols and Definitions Cies Ciss -di/dt IC ID IF IF(AV)M IFSM IGT IR IRM IT IT(AV)M ITSM RDS(on) Rthjc rT Tcase Th tfi Tj, T(vj) Tjm, T(vj)m trr VCE(sat) VCES VDRM VDSS VF VR VRRM VT VT0 Input capacitance of IGBT Input capacitance of MOSFET Rate of decrease of forward current DC collector current Drain current Forward current of diode Maximum average forward current at specified Th Peak one cycle surge forward current Gate trigger current Reverse current Maximum peak recovery current Forward current of thyristor Maximum average on-state current of a thyristor at specified Th Maximum surge current of a thyristor Static drain-source on-state resistance Thermal resistance junction to case Slope resistance of a thyristor or diode (for power loss calculations) Case temperature Heatsink temperature Current fall time with inductive load Junction temperature Maximum junction temperature Reverse recovery time of a diode Collector-emitter saturation voltage Maximum collector-emitter voltage Maximum repetitive forward blocking voltage of thyristor Drain-source break-down voltage Forward voltage of diode Reverse voltage Maximum peak reverse voltage of thyristor or diode On-state voltage of thyristor Threshold voltage of thyristors or diodes (for power loss calculation only) Nomenclature IGBT and MOSFET Discrete IXSD 40N60A IX E F G S T D 40 N P 60 xx A Q Q2 P L -A B C MOSFET Prime RDS(on) for standard MOSFET Low gate charge die Low gate charge die, 2nd generation PolarHTTM Power MOSFET Linear Mode MOSFET IGBT No letter, low VCE(sat) Or A2, std speed type Or B2, high speed type Or C2, very high speed type (Example) IXYS Die technology NPT3 IGBT HiPerFETTM Power MOSFET Fast IGBT IGBT with SCSOA capability Standard Power MOSFET Unassembled chip (die) Current rating, 40 = 40 A N-channel type P-channel type Voltage class, 60 = 600 V Diode and Thyristor Chips C-DWEP 69-12 C D W EP (Diode Example) Package type Chip function D = Silicon rectifier diode Unassembled chip Process designator EP = Epitaxial rectifier diode N = Rectifier diode, cathode on top P = Rectifier diode, anode on top FN = Fast Rectifier diode, cathode on top FP = Fast Rectifier diode, anode on top 69 -12 Current rating value of one chip in A Voltage class, 12 = 1200 V (Thyristor Example) Package type C W P Chip function C = Silicon phase control thyristor Unassembled chip Process designator P = Planar passivated chip cathode on top 55 12/18 Current rating value of one chip in A Voltage class, 12/18 = 1200 up to 1800 V (c) 2004 IXYS All rights reserved Registration No.: 001947 TS2/765/17557 Registration No.: 001947 W-CWP 55-12/18 W Chip and DCB Ceramic Substrates Data book Edition 2004 Published by IXYS Semiconductor GmbH Marketing Communications Edisonstrae 15, D-68623 Lampertheim (c) IXYS Semiconductor GmbH All Rights reserved As far as patents or other rights of third parties are concerned, liability is only assumed for chips and DCB parts per se, not for applications, processes and circuits implemented with components or assemblies. Terms of delivery and the right to change design or specifications are reserved. 2 General Informations for Chips When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chip attach process are very important to the reliability and performance of the final product. This brochure provides several guidelines that describe recommended chip attachment pro-cedures. These methods have been used successfully for many years at IXYS. Available forms of chip packings IXYS offers various options. Please order from one of the following possibilities: Packaging Options C-...* T-...* W-...* Delivery form Chips in tray (Waffle Pack); Chips in wafer, unsawed; Chips in wafer on foil, sawed; Electrically tested Bipolar = 5" (125 mm) wafer; Electrically tested, rejects are inked Bipolar = 5" (125 mm) wafer; Electrically tested, rejects are inked ...* must be amended by the exact chip type designation. Packing, Storage and Handling Chips should be transported in their original containers. All chip transfer to other containers or for assembly should be done only with rubber-tipped vacuum pencils. Contact with human skin (or with a tool that has been touched by hand) leaves an oily residue that may adversely impact subsequent chip attach or reliability. At temperatures below 104F (40C), there is no limitation on storage time for chips in sealed original packages. Chips removed from original packages should be assembled immediately. The wetting ability of the contact metallization with solder can be preserved by storage in a clean and dry nitrogen atmosphere. The IGBT and MOSFET Chips are electrostatic discharge (ESD) sensitive. Normal ESD precautions for handling must be observed. Prior to chip attach, all testing and handling of the chips must be done at ESD safe work stations according to DIN IEC 47(CO) 701. Ionized air blowers are recommended for added ESD protection. Contamination of the chips degrades the assembly results.Finger prints, dust or oily deposits on the surface of the chips have to be absolutely avoided. Rough mechanical treatment can cause damage to the chip. Electrical Tests The electrical properties listed in the data sheet presume correctly assembled chips. Testing of non-assembled chips requires the following precautions: - High currents have to be supplied homogeneously to the whole metallized contact area. - Kelvin probes must be used to test voltages at high currents - Applying the full specified blocking or reverse voltage may cause arcing across the glass passivated junction termination, because the electrical field on top of the passivation glass causes ionization of the surrounding air. This phenomenon can be avoided by using inert fluids or by increasing the pressure of the gas surrounding the chip to values above 30 psig (2 bars). General Rules for Assembly The linear thermal expansion coefficient of silicon is very small compared to usual contact metals. If a large area metallized silicon chip is directly soldered to a metal like copper, enormous shear stress is caused by temperature changes (e.g. when cooling down from the solder temperature or by heating during working conditions) which can disrupt the solder mountdown. If it is found that larger chips are cracking during mountdown or in the application, then the use of a low thermal expansion coefficient buffer layer, e.g. tungsten, molybdenum or Trimetal(R), for strain relief should be considered. An alternative solution is to soft-solder these larger chips to DCB ceramic substrates because of their matching thermal expansion coefficients. IXYS reserves the right to change limits, test conditions and dimensions 3 Assembly Instructions MOS/IGBT Chips Recommended Solder System IXYS recommends a soft solder chip attach using a solder composition of 92.5 % Pb, 5 % Sn and 2.5 % Ag. The maximum chip attach temperature is 460C for MOSFET and 360C for HiPerFETTM and IGBT. Wire Bonding It is recommended to use wire of diameter not greater than 0.38 mm (0.015") for bonding to the source emitter and gate pads. Multiple wires should be used in place of thicker wire to handle high drain or emitter currents. See tables for number of recommended wire bonds. At smaller gate pads 0.15 mm is recommended. Thermal Response Testing To assure good chip attach processing, thermal response testing per MIL STD 750, Method 3161 or equivalent should be performed. Bipolar Chips Assembling IXYS bipolar semiconductor chips have a soft-solderable, multi-layer metallization (Ti/Ni/Ag) on the bottom side and, on top, either the same metallization scheme or an alumunium layer sufficiently thick for ultrasonic bonding. Note that the last layer of metal for soldering is pure silver. Regardless of their type all chips possess the same glass passivated junction termination system on top of the chip. For that reason they can be easily chip bonded or they can all be simply soldered to a flat contacting electrode in accordance to the General Rules on Page 3. All kinds of the usual soft solders with melting points below 660F (350C) can be used thanks to their pure silver top metal. Solders with high melting points are preferable due to their better power cycling capability, i.e. they are more resistant to thermal fatigue. Soldering temperature should not exceed 750F (400C). The maximum temperature should not be applied for more than five minutes. As already mentioned above the electrical properties quoted in the data sheets can only be obtained with properly assembled chips. This is only possible when all contact materials to be soldered together are well wetted and the solder is practically free of voids. A simple means to achieve good solder connections is to use a belt furnace running with a process gas containing at least 10 % Hydrogen in Nitrogen. Other approved methods are also allowed, provided that the above mentioned temperature-time-limits are not exceeded and temperature shocks above 930F/min (500 K/min) are avoided. We do not recommend the use of fluxes for soldering! Ultrasonic Wire Bonding Chips provided with a thick aluminium layer are designed for ultrasonic wire bonding. Wire diameters up to 500 m can be used dependent on chip types. Setting wires in parallel and application of stitch bonding lead to surge current ratings comparable to soldered chips. Coating Although the chips are glass passivated, they must be protected against arcing and environmental influences. The coating material that is in contact with the chip surface must have the following properties: - elasticity (to prevent mechanical stress) - high purity, no contamination with alkali metals - good adhesion to metals and glass passivation. 4 (c) 2004 IXYS All rights reserved FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes (FRED) Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling diodes. At increasing switching frequencies, the proper functioning and efficiency of the power switch, aside from conduction losses, is determined by the turn-off behavior of the diode (characterized by Qrr, IRM and trr - Fig. 1. The reverse current character-istic following the peak reverse current IRM is another very im-portant property. The slope of the decaying reverse current dirr/dt results from design para- meters (technology and dif-fusion of the FRED chip Fig. 2. In a circuit this current slope, in conjunction with parasitic induc-tances (e.g. connecting leads, causes over-voltage spikes and high frequency interference vol-tages.The higher the dirr/dt ("hard recovery" or "snap-off" behavior) the higher is the resulting additional stress for both the diode and the paralleled switch. A slow decay of the reverse current ("soft recovery" behavior), is the most desirable characteristic, and this is designed into all FRED. The wide range of available blocking voltages makes it possible to apply these FRED as output rectifiers in switch-mode power supplies (SMPS) as well as protective and free-wheeling diodes for power switches in inverters and welding power supplies. Fig. 1: Current and voltage during turn-on and turn-off switching of fast diodes Rectifier Diode and Thyristor Chips The figures 3 a-c show cross sectional views of the diode and thyristor chips in the passivation area. All thyristor and diode chips (DWN, DWFN, CWP) are fabricated using separation diffusion processes so that all junctions terminate on the topside of the chip. Now the entire bottom surfaces of all chips are available for soldering onto a DCB or other ceramic substrate without a molybdenum strain buffer. The elimination of the strain buffer and its solder joint reduces thermal resistance and increases blocking voltage stability. The junction termination areas are passivated with glass, whose thermal expansion coefficient matches that of silicon. All silicon chips increasingly use planar technology with guard rings and channel stoppers to reduce electric fields on the chip surface. The contact areas of the chips have vapor deposited metal layers which contribute substantially to their high power cycle capability. All chips are processed on silicon wafers of 5" diameter and diced after a wafer sample test which auto-matically marks chips not meeting the electrical specification. The chip geometry is square or rectangular. Anode A no de E pitax ie ch ich t n Epitaxy Slayer - n- Glasspassivation Guard ring S ub stra t n+ Substrate n+ K atho de Cathode Metalization Fig. 2: Cross section of glassivated planar epitaxial diode chip with seperation diffusion (type DWEP) Fig. 3a-c Cross sections of Chips in the passivation area a) Diode chip, type DWN, DWFN b) Diode chip, type DWP, DWFP c) Thyristor chip, type CWP Glasspassivation Guard ring p n n+ Glasspassivation Fig. 3b) Metalization Emitter Glasspassivation Guard ring Channelstopper Fig. 3a) Fig. 3c) Metalization Metalization IXYS reserves the right to change limits, test conditions and dimensions 5 Rectifier Diodes Type VRRM IR VRRM TVJ M typ. mA 0.7 0.7 0.7 1.0 1.5 1.5 3.0 3.0 1.5 1.5 2.0 2.0 2.0 2.0 3.5 3.5 15.0 3.5 3.5 TVJM IF(AV)M rect. d = 0.5 RthJC 1 typ. K/W 2.80 2.80 2.80 1.80 1.10 1.10 0.90 0.90 0.65 0.65 0.50 0.50 0.33 0.35 0.16 0.16 0.10 0.16 0.05 25C V 1.14 1.14 1.14 1.28 1.34 1.37 1.33 1.35 1.24 1.25 1.31 1.33 1.26 1.27 1.18 1.18 1.09 1.18 1.10 VF TVJ = 125C V 1.14 1.14 1.14 1.28 1.34 1.37 1.33 1.35 1.24 1.25 1.31 1.33 1.26 1.27 1.18 1.18 1.09 1.18 1.10 IFSM @IF A 7 7 7 30 50 50 80 80 80 80 150 150 200 200 300 300 300 300 600 A 140 140 150 300 320 320 500 500 630 630 900 900 1500 1500 3200 3200 5900 3200 10500 V DWN 5 DWP 5 DWN 2 DWN 9 DWN 17 DWP 17 DWN 21 DWP 21 DWN 35 DWP 35 DWN 50 DWP 50 DWN 75 DWP 75 DWN 110 DWP 110 DWN 340 DWN 108 DWN 347 800 1200 1200 1800 C 150 TC = 100C A 12 12 12 20 31 31 42 41 59 58 78 76 115 118 253 253 416 253 788 Reverse Recovery @-di/dt IRM @IF 25C; VR = 100 V A A A/s tbd tbd tbd tbd tbd tbd tbd tbd 11 11 12 12 24 24 45 45 235 45 45 tbd tbd tbd tbd tbd tbd tbd tbd 50 50 50 50 50 50 50 50 30 50 40 tbd tbd tbd tbd tbd tbd tbd tbd 0.64 0.64 1 1 3 3 6 6 50 6 50 1600 2200 1 Mounted on DCB (c) 2004 IXYS All rights reserved 18 Rectifier Diodes solderable bondable Type Chips per Wafer 1123 716 1204 684 518 518 346 346 259 259 198 198 125 125 58 58 32 58 16 Dimensions A mm 4.40 4.40 2.95 3.90 4.45 4.45 5.40 5.40 6.20 6.20 7.10 7.10 8.70 8.70 12.30 12.30 16.20 12.30 25.30 -0.1 B mm 2.10 2.10 2.95 3.90 4.45 4.45 5.40 5.40 6.20 6.20 7.10 7.10 8.70 8.70 12.30 12.30 16.20 12.30 18.50 -0.1 Sithickn. mm 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.315 0.315 5% DWN 5 DWP 5 DWN 2 DWN 9 DWN 17 DWP 17 DWN 21 DWP 21 DWN 35 DWP 35 DWN 50 DWP 50 DWN 75 DWP 75 DWN 110 DWP 110 DWN 340 DWN 108 DWN 347 Tolerance * * * * * * * * * * * * * * * * * * * * * * DWN * * * * DWP (c) 2004 IXYS All rights reserved 19 FRED - Fast Recovery Epitaxial Diodes Type VRRM IR VRRM 125C mA 5.0 11.0 20.0 1.5 1.5 3.0 7.0 7.0 14.0 17.0 20.0 2.0 4.0 7.0 7.0 14.0 17.0 20.0 2.0 4.0 7.0 7.0 14.0 17.0 20.0 TVJM IF(AV)M rect. d = 0.5 TC = 100C A 54 91 244 tbd 8 12 30 30 60 80 162 tbd 12 30 30 60 82 129 tbd 12 30 30 60 77 123 RthJC 1 typ. K/W 0.9 tbd 0.4 2.5 2.5 1.6 0.9 0.9 0.8 0.7 0.4 2.5 1.6 0.9 0.9 0.8 0.7 0.4 2.5 1.6 0.9 0.9 0.7 0.7 0.4 TVJ = 25C V 1.09 1.03 1.12 1.65 1.45 1.65 1.53 1.53 1.73 1.58 1.31 2.65 2.65 2.43 2.35 2.24 2.12 1.89 2.55 2.55 2.60 2.50 2.35 2.19 1.77 VF @IF V 0.84 0.87 0.87 1.48 1.31 1.48 1.33 1.38 1.48 1.38 1.10 2.09 2.09 2.04 1.99 1.79 1.68 1.57 2.19 2.19 2.19 2.19 1.94 1.89 1.54 @ C 150 150 150 150 150 150 150 150 150 125 125 150 150 150 150 150 125 125 150 150 150 150 150 125 125 A 30 100 125 8 8 16 30 43 70 75 75 6 12 30 36 60 50 75 5 12 30 30 60 50 75 A 300 475 1200 50 100 100 250 300 550 600 1000 40 75 200 200 500 500 800 80 75 200 200 500 500 800 IFSM IRM 25C; VR = 100 V A 4 4 2 5 5 5 5 5 5 5 20 7 5 7 7 7 6 14 7 5 7 7 7 9 20 Reverse Recovery @-di/dt @IF trr VR = 30 V typ. ns 50 100 12.5 12 25 25 50 50 100 100 80 12 25 50 50 100 50 80 10 25 50 50 100 50 75 100 100 25 100 100 100 100 100 100 100 200 100 100 100 100 100 120 200 100 100 100 100 100 100 200 35 35 tbd tbd 35 35 35 35 35 35 35 tbd 35 35 35 35 35 35 tbd 50 40 40 40 40 40 @IF A 1 1 1 tbd @-di/dt A/s 100 200 350 tbd 50 50 100 100 200 200 350 tbd 50 100 100 200 200 350 tbd 50 100 100 200 200 350 V DWEP 27-02 DWEP 37-02 DWEP 77-02 DWEP 8-06 DWEP 12-06 DWEP 15-06 DWEP 23-06 DWEP 25-06 DWEP 35-06 DWEP 55-06 DWEP 75-06 DWEP 3-10 DWEP 10-10 DWEP 18-10 DWEP 20-10 DWEP 30-10 DWEP 50-10 DWEP 70-10 DWEP 6-12 DWEP 9-12 DWEP 17-12 DWEP 19-12 DWEP 29-12 DWEP 49-12 DWEP 69-12 200 C 150 600 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1000 tbd 1200 tbd 1 Mounted on DCB (c) 2004 IXYS All rights reserved 20 FRED - Fast Recovery Epitaxial Diodes solderable bondable Type Chips per Wafer 518 257 151 1612 1851 990 531 518 257 230 151 1612 990 531 518 257 230 151 1851 990 531 518 257 230 151 Dimensions A mm 4.45 6.20 8.91 3.60 2.40 3.25 5.50 4.45 6.20 8.65 8.91 1.80 3.25 5.50 4.45 6.20 8.65 8.91 2.40 3.25 5.50 4.45 6.20 8.65 8.91 -0.1 B mm 4.45 6.20 7.22 1.80 2.40 3.25 3.50 4.45 6.20 4.95 7.22 3.60 3.25 3.50 4.45 6.20 4.95 7.22 2.40 3.25 3.50 4.45 6.20 4.95 7.22 -0.1 Sithickn. mm 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 5% DWEP 27-02 DWEP 37-02 DWEP 77-02 DWEP 8-06 DWEP 12-06 DWEP 15-06 DWEP 23-06 DWEP 25-06 DWEP 35-06 DWEP 55-06 DWEP 75-06 DWEP 3-10 DWEP 10-10 DWEP 18-10 DWEP 20-10 DWEP 30-10 DWEP 50-10 DWEP 70-10 DWEP 6-12 DWEP 9-12 DWEP 17-12 DWEP 19-12 DWEP 29-12 DWEP 49-12 DWEP 69-12 Tolerance * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * (c) 2004 IXYS All rights reserved 21 Low Leakage Fast Recovery Epitaxial Diodes Type VRRM IR VRRM TVJ M mA 0.20 0.50 0.50 0.20 0.20 0.25 0.50 0.50 1.00 1.00 2.50 4.00 0.25 0.50 1.00 2.50 4.00 8.50 0.20 0.25 0.25 0.50 0.50 1.00 2.00 2.50 4.00 0.25 0.50 1.00 2.50 4.00 TVJM IF(AV)M rect. d = 0.5 TC= 100C A 14 29 25 46 13 15 25 29 51 41 72 117 14 24 46 67 117 148 11 12 11 21 16 40 30 62 99 9 14 29 48 78 R thJC 1 typ. K/W 2.50 1.60 1.60 0.90 2.80 2.50 1.60 1.60 0.90 0.90 0.65 0.40 2.50 1.60 0.90 0.65 0.40 0.35 2.80 2.50 2.50 1.60 1.60 0.90 0.90 0.65 0.40 2.50 1.60 0.90 0.65 0.40 VF TVJ = 25C 175C V V 1.21 0.99 1.13 1.10 1.63 1.45 1.44 1.26 1.19 1.49 1.42 1.43 1.40 1.40 1.43 1.12 1.39 6.14 1.97 1.95 2.39 1.95 2.38 1.54 2.45 1.92 1.93 2.61 2.45 2.68 2.54 2.56 0.75 0.74 0.78 0.80 0.96 0.95 0.94 0.60 0.77 0.99 0.91 0.92 0.91 0.90 0.93 0.81 0.89 9.72 1.14 1.13 1.25 1.12 1.23 1.10 1.35 1.10 1.11 1.46 1.52 1.52 1.40 1.42 IFSM @IF A 5 12 12 30 5 6 12 12 30 30 60 100 6 12 30 60 100 300 5 6 6 12 12 30 30 60 100 6 12 30 60 100 A 80 140 140 325 40 60 110 110 300 300 600 1000 60 110 300 600 1000 1200 40 50 50 110 110 250 250 600 1000 40 90 200 500 800 IRM 25C; VR = 100 V A 2.4 2.4 1.1 2.0 1.3 1.4 1.4 1.4 3.0 1.9 2.8 3.2 1.4 2.5 2.5 3.5 4.0 9.5 2.6 2.6 1.4 2.9 1.5 3.5 2.0 4.0 4.5 5.0 5.7 6.7 7.0 7.4 Reverse Recovery @IF @-di/dt trr VR = 30 V typ. ns 10 25 25 50 10 12 25 25 50 50 130 200 12 25 50 130 200 200 10 12 12 25 25 50 50 130 200 12 25 50 130 200 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 25 25 25 30 30 30 30 30 25 30 30 30 30 30 30 30 30 30 35 30 35 35 35 30 35 35 40 40 40 40 40 @IF A 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 @-di/dt A/s 50 100 100 200 50 50 100 100 200 200 300 400 50 100 200 300 400 800 50 50 50 100 100 200 200 300 400 50 100 200 300 400 V DWLP 4-02 DWLP 15-02 DWLP 15-02B DWLP 25-02 DWLP 4-03 DWLP 8-03 DWLP 15-03 DWLP 15-03A DWLP 23-03 DWLP 23-03A DWLP 55-03 DWLP 75-03 DWLP 8-04 DWLP 15-04 DWLP 23-04 DWLP 55-04 DWLP 75-04 DWLP 150-04 DWLP 4-06 DWLP 8-06A DWLP 8-06B DWLP 15-06A DWLP 15-06B DWLP 23-06A DWLP 23-06B DWLP 55-06 DWLP 75-06 DWLP 8-12 DWLP 15-12 DWLP 23-12 DWLP 55-12 DWLP 75-12 200 C 175 300 400 600 1200 1 Mounted on DCB (c) 2004 IXYS All rights reserved 22 Low Leakage Fast Recovery Epitaxial Diodes solderable Type bondable Chips per Wafer 1960 990 990 518 1960 1612 990 990 531 531 230 151 1612 990 531 230 151 74 1960 1612 1612 990 990 531 531 230 151 1612 990 531 230 151 Dimensions A mm 3.00 3.25 3.25 4.45 3.00 3.60 3.25 3.25 5.50 5.50 8.65 8.91 3.60 3.25 5.50 8.65 8.91 13.00 3.00 3.60 3.60 3.25 3.25 5.50 5.50 8.65 8.91 3.60 3.25 5.50 8.65 8.91 -0.1 B mm 1.80 3.25 3.25 4.45 1.80 1.80 3.25 3.25 3.50 3.50 4.95 7.22 1.80 3.25 3.50 4.95 7.22 9.77 1.80 1.80 1.80 3.25 3.25 3.50 3.50 4.95 7.22 1.80 3.25 3.50 4.95 7.22 -0.1 Sithickn. mm 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.38 0.38 0.38 0.38 0.38 0.38 0.40 0.40 0.40 0.40 0.40 0.40 0.40 0.40 0.40 0.46 0.46 0.46 0.46 0.46 5% (c) 2004 IXYS All rights reserved DWLP 4-02 DWLP 15-02 DWLP 15-02B DWLP 25-02 DWLP 4-03 DWLP 8-03 DWLP 15-03 DWLP 15-03A DWLP 23-03 DWLP 23-03A DWLP 55-03 DWLP 75-03 DWLP 8-04 DWLP 15-04 DWLP 23-04 DWLP 55-04 DWLP 75-04 DWLP 150-04 DWLP 4-06 DWLP 8-06A DWLP 8-06B DWLP 15-06A DWLP 15-06B DWLP 23-06A DWLP 23-06B DWLP 55-06 DWLP 75-06 DWLP 8-12 DWLP 15-12 DWLP 23-12 DWLP 55-12 DWLP 75-12 Tolerance * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * 23 SONIC-FRDTM Diodes Type VRRM IR VRRM 125C typ. mA tbd tbd tbd tbd tbd tbd 0.1 0.2 0.6 0.6 1 1 1.5 0.6 1 1.8 tbd 0.1 0.2 0.6 1 TVJM IF(AV)M rect. d = 0.5 TC = 100C A tbd tbd tbd tbd tbd tbd 12 17 29 37 47 60 150 31 51 tbd tbd 12 16 27 44 RthJC 1 typ. K/W tbd tbd 0.90 0.65 0.40 tbd 0.90 0.90 0.65 0.65 0.40 0.40 tbd 0.65 0.40 0.22 tbd 0.90 0.90 0.65 0.40 VF TVJ = 25C 150C V V tbd tbd 1.94 2.04 2.05 tbd 3.08 2.97 3.15 2.12 3.17 2.13 2.00 2.35 2.34 1.95 tbd 3.01 2.86 2.90 2.89 tbd tbd 1.68 1.78 1.80 tbd 2.61 2.49 2.70 1.98 2.72 1.99 1.87 2.46 2.44 2.03 tbd 3.08 2.90 2.94 2.93 IFSM @IF A tbd tbd 20 60 100 tbd 10 20 60 60 100 100 150 60 100 tbd tbd 10 20 60 100 A tbd tbd 200 450 750 tbd 100 200 450 450 750 750 1150 350 650 1150 tbd 50 150 350 650 IRM 25C typ. A tbd tbd tbd tbd tbd tbd tbd 7 18 28 36 53 54 30 50 78 tbd tbd 21 30 50 Reverse Recovery @IF trr typ. ns A tbd tbd tbd tbd tbd tbd tbd 65 50 175 125 330 170 tbd 150 350 tbd tbd 180 330 240 tbd tbd 20 60 100 tbd 10 20 60 60 100 100 150 60 100 150 tbd 10 20 60 100 @-di/dt A/s tbd tbd 200 450 750 tbd 100 200 450 tbd 750 750 1150 400 600 1150 tbd 50 450 450 800 V DWHP 8-06 F DWHP 15-06 F DWHP 23-06 F DWHP 56-06 F DWHP 69-06 F DWHP 150-06 F DWHFP 15-12 F DWHFP 23-12 F DWHFP 56-12 F DWHFP 56-12 S DWHFP 69-12 F DWHFP 69-12 S DWHFP 150-12 S DLFP 55-17 S DLFP 68-17 S DLFP 150-17 S DLFP 200-17 S DLFP 15-16/18 F DLFP 25-16/18 F DLFP 55-16/18 F DLFP 68-16/18 F 1 Mounted on DCB in design 600 C 150 in design 1200 1700 16001800 (c) 2004 IXYS All rights reserved 24 SONIC-FRDTM Diodes solderable bondable Type Chips per Wafer tbd 968 532 231 152 88 968 532 231 231 152 152 88 231 152 88 59 968 532 231 152 Dimensions A mm 3.60 3.25 5.50 8.65 8.91 11.40 3.25 5.50 8.65 8.65 8.91 8.91 11.40 8.65 8.91 11.40 12.40 3.25 4.45 8.65 8.91 -0.1 B mm 1.80 3.25 3.50 4.95 7.22 9.40 3.25 3.50 4.95 4.95 7.22 7.22 9.40 4.95 7.22 9.40 12.40 3.25 4.45 4.95 7.22 -0.1 5% 0.265 Sithickn. mm 0.180 DWHP 8-06 F DWHP 15-06 F DWHP 23-06 F DWHP 56-06 F DWHP 69-06 F DWHP 150-06 F DWHFP 15-12 F DWHFP 23-12 F DWHFP 56-12 F DWHFP 56-12 S DWHFP 69-12 F DWHFP 69-12 S DWHFP 150-12 S DLFP 55-17 S DLFP 68-17 S DLFP 150-17 S DLFP 200-17 S DLFP 15-16/18 F DLFP 25-16/18 F DLFP 55-16/18 F DLFP 68-16/18 F Tolerance * * * * * * * * * * * * * * * * * * * * * (c) 2004 IXYS All rights reserved 25 GaAs Schottky Diodes Type VRRM TVJM IF(AV)M rect. d = 0.5 A 8.5 25.0 5.0 8,4 11.0 15.0 17.0 23.0 3.9 7.8 9.0 14.0 13.0 20.0 3.5 6.0 8.0 17.5 25.0 RthJC TC = 90C typ. K/W 10.12 5.20 10.12 10.12 5.20 5.20 3.70 3.70 10.12 10.12 5.20 5.20 3.70 3.70 10.12 10.12 5.20 5.20 3.70 VF typ TVJ = 25C 125C V V 0.62 0.99 0.85 1.25 0.80 1.21 0.80 1.24 1.30 1.26 1.25 1.26 1.25 1.24 1.60 1,56 1.60 1.56 1,56 0.54 0.94 0.85 1.02 0.80 1.04 0.80 1.07 1.30 1.05 1.25 1.07 1.25 1.10 1.60 1,10 1.60 1.11 1,14 @IF A 2.0 10.0 2.0 4.0 5.0 10.0 7.5 20.0 2.0 4.0 5.0 10.0 7.5 20.0 2.0 4.0 5.0 10.0 20.0 IR typ @VRRM 125C A 700 < 10 700 < 10 1300 < 10 2000 < 10 700 < 10 1300 < 10 2000 < 10 700 < 10 1300 10 15 Cj 0,5*VRRM 125C pF 19.0 19.0 8.8 8.8 22.0 22.0 33.0 33.0 6.4 6.4 18.0 18.0 26.0 26.0 3.7 3.7 9.0 9.0 14.0 IFSM V DWGS04-01A DWGS10-01C DWGS04-018A DWGS04-018C DWGS10-018A DWGS10-018C DWGS20-018A DWGS20-018C DWGS04-025A DWGS04-025C DWGS10-025A DWGS10-025C DWGS20-025A DWGS20-025C DWGS04-03A DWGS04-03C DWGS10-03A DWGS10-03C DWGS20-03C 100 180 C 175 A 12.5 80.0 12.5 32.0 30.0 80.0 50.0 120.0 12.5 32.0 30.0 80.0 50.0 120.0 12.5 32.0 30.0 80.0 120.0 250 300 (c) 2004 IXYS All rights reserved 26 GaAs Schottky Diodes solderable bondable C hips pe r W a fe r 4060 2126 4060 4060 2126 2126 1480 1480 4060 4060 2126 2126 1480 1480 4060 4060 2126 2126 1480 D im e ns ions A mm 1 .3 0 2 .1 0 1 .3 0 1 .3 0 2 .1 0 2 .1 0 3 .0 0 3 .0 0 1 .3 0 1 .3 0 2 .1 0 2 .1 0 3 .0 0 3 .0 0 1 .3 0 1 .3 0 2 .1 0 2 .1 0 3 .0 0 -0 .1 B mm 1 .3 0 1 .6 0 1 .3 0 1 .3 0 1 .6 0 1 .6 0 1 .6 0 1 .6 0 1 .3 0 1 .3 0 1 .6 0 1 .6 0 1 .6 0 1 .6 0 1 .3 0 1 .3 0 1 .6 0 1 .6 0 1 .6 0 -0 .1 D W GS 0 4 -0 1 A D W GS 1 0 -0 1 C D W GS 0 4 -0 1 8 A D W GS 0 4 -0 1 8 C D W GS 1 0 -0 1 8 A D W GS 1 0 -0 1 8 C D W GS 2 0 -0 1 8 A D W GS 2 0 -0 1 8 C D W GS 0 4 -0 2 5 A D W GS 0 4 -0 2 5 C D W GS 1 0 -0 2 5 A D W GS 1 0 -0 2 5 C D W GS 2 0 -0 2 5 A D W GS 2 0 -0 2 5 C D W GS 0 4 -0 3 A D W GS 0 4 -0 3 C D W GS 1 0 -0 3 A D W GS 1 0 -0 3 C D W GS 2 0 -0 3 C Tole ra nc e * * * * * * * * * * * * * * * * * * * (c) 2004 IXYS All rights reserved 27 Schottky Diodes Type VRRM IR VRRM 125C 1) = 100C mA 145 tbd 65 98 tbd tbd 82 102 65 28 32 42 47 63 68 89 95 1) TVJM V DWS 39-08D DWS 9-15B DWS 19-15B DWS 29-15B DWS 7-30B DWS 17-30B DWS 27-30B DWS 37-30B DWS 217-30B DWS 3-45B DWS 4-45A DWS 13-45B DWS 14-45A DWS 23-45B DWS 24-45A DWS 33-45B DWS 34-45A 1 Mounted on DCB 8 15 C 150 150 150 150 tbd 150 150 150 150 150 175 150 175 150 175 150 175 IF(AV)M rect. d = 0.5 TC = 125C 1) = 100C A 145 tbd 65 98 tbd tbd 82 102 65 28 32 42 47 63 68 89 95 1) RthJC 1 typ. K/W 0.8 1.7 1.4 1.1 tbd 1.4 1.1 0.8 1.2 1.7 1.7 1.4 1.4 1.1 1.1 0.8 0.8 25C V 0.31 0.40 0.39 0.39 0.63 tbd 0.42 0.40 0.41 0.48 0.66 0.48 0.66 0.48 0.66 0.48 0.66 VF TVJ = A version: 150C B version: 125C V 0.18 0.28 0.24 0.25 0.43 tbd 0.29 0.27 0.30 0.41 0.50 0.41 0.50 0.42 0.50 0.41 0.51 IFSM @IF IRM 25C A 1000 160 350 660 tbd 330 520 800 420 160 140 320 280 640 550 900 800 A tbd tbd tbd tbd tbd 2.40 tbd tbd 5.50 1.00 1.00 1.40 1.50 2.00 2.00 2.60 2.50 Reverse Recovery @IF @-di/dt trr typ. ns tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd A 50 tbd 20 40 tbd 20 40 50 30 10 10 20 20 40 40 50 50 A/s 200 tbd 200 200 tbd 200 200 200 200 200 200 200 200 200 200 200 200 A 60 10 20 40 10 20 40 40 28 10 10 20 20 40 40 60 60 1) 1) 1) 1) 30 1) 1) 1) 1) 1) 1) 1) 1) 45 1) 1) 1) 1) 1) 1) (c) 2004 IXYS All rights reserved 28 Schottky Diodes Type solderable bondable Chips per Wafer Dimensions A mm 343 * * * * * * * * * * * * * * * * 1886 990 515 2857 990 515 515 729 2857 1886 1515 990 757 757 515 515 5.40 2.40 3.25 4.45 2.40 3.25 4.45 5.40 3.25 2.40 2.40 3.25 3.25 4.45 4.45 5.40 5.40 -0.1 B mm 5.40 2.40 3.25 4.45 2.40 3.25 4.45 5.40 4.45 2.40 2.40 3.25 3.25 4.45 4.45 5.40 5.40 -0.1 5% mm 0.25/0.43 0.25/0.43 Sithickn. DWS 39-08D DWS 9-15B DWS 19-15B DWS 29-15B DWS 7-30B DWS 17-30B DWS 27-30B DWS 37-30B DWS 217-30B DWS 3-45B DWS 4-45A DWS 13-45B DWS 14-45A DWS 23-45B DWS 24-45A DWS 33-45B DWS 34-45A Tolerance * 0.25 * * * (c) 2004 IXYS All rights reserved 29 Schottky Diodes Type VRRM IR VRRM 125C 1) TVJM IF(AV)M rect. d = 0.5 TC = 125C 1) RthJC 1 typ. K/W 1.7 1.4 1.1 0.8 1.1 0.8 1.7 1.4 1.1 0.8 1.7 1.4 1.1 0.8 1.7 0.8 25C V tbd 0.60 0.59 0.53 0.70 0.74 0.77 0.78 0.78 0.77 0.81 0.81 0.81 0.81 0.81 0.00 VF TVJ = 150C V tbd 0.60 0.50 0.48 0.55 0.58 0.57 0.57 0.58 0.57 0.62 0.62 0.63 0.62 0.62 0.00 IFSM @IF IRM 25C A 170 320 660 900 660 700 120 230 450 700 120 200 450 700 120 700 A tbd tbd tbd 2.50 1.50 2.00 2.00 2.30 2.60 3.40 3.00 4.00 tbd 4.50 3.50 5.00 Reverse Recovery @IF @-di/dt trr typ. ns tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd A tbd 20 40 50 40 50 10 20 40 50 10 20 40 50 10 50 A/s tbd 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 V DWS 5-60A DWS 15-60B DWS 25-60B DWS 35-60B DWS 25-80B DWS 36-80A DWS 2-100A DWS 12-100A DWS 22-100A DWS 32-100A DWS 1-150A DWS 11-150A DWS 21-150A DWS 31-150A DWS 1-180A DWS 30-200A 1 Mounted on DCB 60 = 100C mA tbd 43 63 82 66 91 32 45 65 92 30 43 60 85 30 tbd C 175 150 150 150 150 175 175 175 175 175 175 175 175 175 175 175 = 100C A tbd 43 63 82 66 91 32 45 65 92 30 43 60 85 30 tbd A 10 20 40 60 40 60 10 20 40 60 10 20 40 60 10 60 1) 1) 1) 80 100 150 180 200 (c) 2004 IXYS All rights reserved 30 Schottky Diodes Type solderable bondable Chips per Wafer Dimensions A mm 2857 990 757 515 515 343 1886 990 757 515 2857 1515 757 515 1886 515 2.40 3.25 4.45 5.40 4.45 5.40 2.40 3.25 4.45 5.40 2.40 3.25 4.45 5.40 2.40 5.40 -0.1 B mm 2.40 3.25 4.45 5.40 4.45 5.40 2.40 3.25 4.45 5.40 2.40 3.25 4.45 5.40 2.40 5.40 -0.1 5% mm 0.25 Sithickn. DWS 5-60A DWS 15-60B DWS 25-60B DWS 35-60B DWS 25-80B DWS 36-80A DWS 2-100A DWS 12-100A DWS 22-100A DWS 32-100A DWS 1-150A DWS 11-150A DWS 21-150A DWS 31-150A DWS 1-180A DWS 30-200A Tolerance * * * * * * * * * * * * * * * * * (c) 2004 IXYS All rights reserved 31 Phase Control Thyristors Type VDRM VRRM IR VRRM TVJ M mA 5 4 4 20 8 12 12 20 20 20 20 20 20 30 40 40 60 20 40 60 TVJM IT(AV)M rect. d = 0.5 TC = 100C 1) RthJC 1 max. K/W 1.7 1.7 1.7 0.7 1.2 1.1 0.9 0.9 0.9 0.5 0.6 0.5 0.4 0.2 0.2 0.2 0.1 0.2 0.2 0.1 VT TVJ = @IT 25C 150C V 1.55 1.53 1.53 1.46 1.40 1.56 1.55 1.33 1.33 1.53 1.38 1.29 1.35 1.21 1.22 1.21 1.17 1.55 1.26 1.34 V 1.41 1.53 1.53 1.49 1.41 1.57 1.57 tbd 1.31 1.58 1.38 1.26 1.35 1.16 1.17 1.17 1.11 tbd tbd 1.34 A 20 44 44 150 45 80 80 60 60 200 200 200 300 350 450 600 600 300 300 600 ITSM non-rep. tp = 10ms A 200 300 300 1200 400 520 520 600 600 1150 1500 1900 2400 4750 5200 7000 9500 1700 6000 8000 V CWP 7-CG CWP 8 CWP 8-CG CWP 35 CWP 16-CG CWP 21-CG CWP 22-CG CWP 24 CWP 25-CG CWP 41 CWP 50 CWP 55 CWP 71 CWP 130 CWP 180 CWP 341 CWP 347 CWP 69 CWP 339 CWP 345 800 1200 C 125 150 150 150 150 = 75C A 15 tbd tbd tbd 25 61 36 tbd tbd 125 tbd tbd tbd 204 372 tbd 540 tbd tbd 520 1) tq VR = 100V, VD = 2/3 VDRM tp = 200s, di/dt = -10A/s TVJ = TVJM s tbd 60 60 100 150 150 150 60 60 150 150 150 185 150 150 200 200 185 150 200 dv/dt @IT V/s tbd 20 20 10 10 20 15 20 20 20 20 20 20 20 20 50 50 20 20 50 A tbd 16 16 50 11 15 20 25 25 120 150 150 150 160 300 300 300 150 160 300 IL IH RGK = @tp VD = 6 V TVJ = 25C TVJ = 25C mA s ns 50 40 80 80 100 100 100 100 100 200 200 200 200 200 200 150 150 150 150 150 75 100 100 100 150 150 450 200 200 450 450 450 450 300 300 200 200 200 200 200 10 10 10 10 10 10 10 10 10 10 10 10 10 30 30 30 30 30 30 30 1200 1600 - 1200 1800 1600 2200 1 Mounted on DCB (c) 2004 IXYS All rights reserved 32 Phase Control Thyristors Type solderable bondable Chips per Wafer Dimensions A mm 518 375 375 125 239 196 196 196 196 94 74 58 50 29 20 16 13 50 16 13 4.45 5.20 5.20 8.70 6.50 7.10 7.10 7.10 7.10 10.00 13.00 12.30 13.40 19.05 20.55 25.30 23.40 13.40 18.50 23.40 -0.1 B mm 4.45 5.20 5.20 8.70 6.50 7.10 7.10 7.10 7.10 10.00 9.77 12.30 13.40 15.40 17.65 18.50 23.40 13.40 25.30 23.40 -0.1 F mm 1.80 1.80 1.80 1.80 2.30 2.30 2.30 2.30 3.46 3.50 3.50 3.50 2.30 3.50 3.50 -0.1 G mm 0.90 0.90 1.00 1.00 1.50 1.50 1.50 1.50 2.50 2.50 2.50 2.50 1.50 2.50 2.50 +0.1 Corner Gate J L M mm mm mm 0.2 0.2 0.2 0.2 0.2 0.2 -0.1 1.1 1.1 1.1 1.1 1.1 1.1 +0.1 1.6 1.6 1.6 1.6 1.6 1.6 +0.1 Sithickn. mm 0.38 0.38 0.32 0.38 0.38 0.38 0.38 0.32 0.32 0.38 0.38 0.38 0.38 0.38 0.38 0.38 0.38 0.46 0.46 0.46 5% CWP 7-CG CWP 8 CWP 8-CG CWP 35 CWP 16-CG CWP 21-CG CWP 22-CG CWP 24 CWP 25-CG CWP 41 CWP 50 CWP 55 CWP 71 CWP 130 CWP 180 CWP 341 CWP 347 CWP 69 CWP 339 CWP 345 Tolerance * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * ...-CG types (c) 2004 IXYS All rights reserved 33 Fast Rectifier Diodes Type VRRM IR VRRM TVJ M typ. mA 2 4 5 5 8 10 TVJM IF(AV)M rect. d = 0.5 TC = 75C A 10 16 17 17 23 26 RthJC 1 typ. K/W 2.9 1.6 1.3 1.3 0.9 0.7 VF TVJ = 25C 125C V V 1.79 1.98 1.89 2.10 1.98 1.88 tbd tbd tbd tbd tbd tbd IFSM @IF A 10 30 55 55 70 80 A 75 160 300 300 400 500 IRM 25C A tbd tbd tbd tbd tbd tbd @IF Reverse Recovery @-di/dt @IF trr typ. s A tbd tbd tbd tbd tbd tbd 1.5 1.5 1.5 1.5 1.5 1.5 4 8 10 10 15 25 @-di/dt A/s 5 5 10 10 15 25 V DWFN 2-16/18 DWFN 9-16/18 DWFN 17-16/18 DWFP 17-16/18 DWFN 21-16/18 DWFN 35-16/18 1 Mounted on DCB 1600 1800 C 125 tbd tbd tbd tbd tbd tbd solderable bondable Type Chips per Wafer 1204 684 518 239 346 259 Dimensions A mm 2.95 3.90 4.45 4.45 5.40 6.20 -0.1 B mm 2.95 3.90 4.45 4.45 5.40 6.20 -0.1 Sithickn. mm 0.265 0.265 0.265 0.265 0.265 0.265 5% DWFN 2-16/18 DWFN 9-16/18 DWFN 17-16/18 DWFP 17-16/18 DWFN 21-16/18 DWFN 35-16/18 Tolerance * * * * * * * * DWFN DWFP (c) 2004 IXYS All rights reserved 34 |
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